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  2db1132p/q/r document number: ds31142 rev: 5 - 2 1 of 6 www.diodes.com september 2011 ? diodes incorporated 2db1132p/q/r 32v pnp surface mount t ransistor in sot-89 features ? bv ceo > -32v ? max continuous current i c = -1a ? epitaxial planar die construction ? complementary npn type available (2dd1664) ? ideally suited for automated assembly processes ? ideal for medium power switching or amplification applications ? lead free, rohs compliant (note 1) ? halogen and antimony free, ?green? devices (note 2) mechanical data ? case: sot-89 ? case material: molded plasti c. ?green? molding compound. ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish ? weight: 0.055 grams (approximate) ordering information product grade marking reel size (inches) tape width (mm) quantity per reel 2db1132p-13 commercial p13p 13 12 2,500 2DB1132Q-13 commercial p13q 13 12 2,500 2db1132r-13 commercial p13r 13 12 2,500 notes: 1. no purposefully added lead. 2. ?green? devices, halogen and antimony free, diodes inc?s ?green? policy can be found on our website at http://www.diodes.com marking information top view device symbol pin out ? top view sot-89 c b e p13x yww (top view) p13x = product type marking code: where p13p = 2db1132p p13q = 2db1132q p13r = 2db1132r yww = date code marking y = last digit of year ex: 7 = 2007 ww = week code 01 - 52
2db1132p/q/r document number: ds31142 rev: 5 - 2 2 of 6 www.diodes.com september 2011 ? diodes incorporated 2db1132p/q/r maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -32 v emitter-base voltage v ebo -5 v continuous collector current i c -1 a peak pulse current (note 4) i cm -2 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 3) p d 1 w thermal resistance, junction to ambient (note 3) r ja 125 q c/w  thermal resistance, junction to leads (note 5) r jl 22 q c/w  operating and storage temperature range t j, t stg -55 to +150 q c notes: 3. for a device surface mounted on fr-4 pcb with minimu m suggested pad layout; high co verage of single sided 1 oz copper , in still air conditions 4. measured under pulsed conditions. pulse width = 300s. duty cycle 2%. 5. thermal resistance from junction to solder-point (at the end of the collector lead). 0 0.2 0.4 25 50 75 100 125 150 p , p o we r dissi p a t i o n (w) d t , ambient temperature (c) fig. 1 power dissipation vs. ambient temperature (note 3) a 0.6 0.8 1.0 0
2db1132p/q/r document number: ds31142 rev: 5 - 2 3 of 6 www.diodes.com september 2011 ? diodes incorporated 2db1132p/q/r electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -40 - - v i c = -50a collector-emitter breakdown voltage (note 6) bv ceo -32 - - v i c = -1ma emitter-base breakdown voltage bv ebo -5 - - v i e = -50a collector cut-off current i cbo - - -0.5 a v cb =-20v emitter cut-off current i ebo - - -0.5 a v eb = -4v static forward current transfer ratio (note 6) 2db1132p h fe 82 - 180 - i c = -100ma, v ce = -3v 2db1132q 120 270 2db1132r 180 390 collector-emitter saturation voltage (note 6) v ce ( sat ) - -125 -500 mv i c =-500ma, i b = -50ma transition frequency f t - 190 - mhz i e = 50ma, v ce = -5v,f=30mhz output capacitance c ob - 12 30 pf i e = 0a, v cb = -10v,f=1mhz notes: 6. measured under pulsed conditions. pulse width = 300 s. duty cycle 2% electrical characteristics 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.001 0.01 0.1 1 10 100 t = -55c a t = 25c a t = 85c a t = 150c a v = -3v ce 200 300 400 500
2db1132p/q/r document number: ds31142 rev: 5 - 2 4 of 6 www.diodes.com september 2011 ? diodes incorporated 2db1132p/q/r electrical characteristic - (cont.) t = -55c a t = 25c a t = 85c a t = 150c a i/i = 10 cb t = -55c a t = 25c a t = 85c a t = 150c a v = -3v ce t = -55c a t = 25c a t = 85c a t = 150c a i/i = 10 cb 0 20 40 30 10 -i , emitter current e fig. 8 typical gain-bandwidth product vs. emitter current 50 100 150 200 250 v = -5v f = 30mhz ce
2db1132p/q/r document number: ds31142 rev: 5 - 2 5 of 6 www.diodes.com september 2011 ? diodes incorporated 2db1132p/q/r package outline dimensions suggested pad layout sot89 dim min max a 1.40 1.60 b 0.44 0.62 b1 0.35 0.54 c 0.35 0.43 d 4.40 4.60 d1 1.52 1.83 e 2.29 2.60 e 1.50 typ e1 3.00 typ h 3.94 4.25 l 0.89 1.20 all dimensions in mm dimensions value (in mm) x 0.900 x1 1.733 x2 0.416 y 1.300 y1 4.600 y2 1.475 y3 0.950 y4 1.125 c 1.500 e d h l a c e 8 ( 4 x ) b1 b d1 r 0 . 2 0 0 e1 y1 x1 y2 y c x (3x) y3 y4 x2 (2x)
2db1132p/q/r document number: ds31142 rev: 5 - 2 6 of 6 www.diodes.com september 2011 ? diodes incorporated 2db1132p/q/r important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com


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